Gate Leakage Current in GaN HEMT’s: A Degradation Modeling Approach
نویسندگان
چکیده
منابع مشابه
Simulation Study of Gate Leakage Current Under Three-Terminal Operation for AlGaN/GaN HEMTs
On-state gate leakage current behavior of AlGaN/GaN high electron mobility transistors (HEMTs) has been studied by using Technology Computer Aided Design (TCAD) simulation. We found the gate leakage current increases above the pinch-off voltage, which is different from the case of a two-terminal operation. This gate leakage current increase is due to self-heating effect at the gate edge of the ...
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Feng Gao, Carl. V. Thompson, Jesús del Alamo and Tomás Palacios Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA 2Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA, email: [email protected] The last twenty years have witnessed numerous de...
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AlN/GaN single heterojunction MOS-HEMTs grown by molecular beam epitaxy have been fabricated utilising HfO2 high-K dielectrics deposited by atomic layer deposition. Typical DC transfer characteristics of 1.3 mm gate length devices show a maximum drain current of 950 mA/mm and a transconductance of 210 mS/mm with gate currents of 5 mA/mm in pinch-off. Unity gain cutoff frequencies, ft and fmax, ...
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This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress. Based on combined electrical and electroluminescence measurements, we demonstrate the following results: (i) the catastrophic breakdown voltage of the gate diode is higher than 11 V at room temperature; (ii) in a step-stress ex...
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ژورنال
عنوان ژورنال: Electrical and Electronic Engineering
سال: 2013
ISSN: 2162-9455
DOI: 10.5923/j.eee.20120206.09